نتایج جستجو برای: cmos hv m 180

تعداد نتایج: 595841  

2002
B. Davvaz

In this paper we consider the relation 2! defined on an Hv-module M and we interprete the lower and upper approximations as subsets of the module M=2! and we give some results in this connection.

Journal: :The Journal of chemical physics 2005
David P Shelton

VH and HV depolarized hyper-Rayleigh scattering spectra were measured for liquid solutions of dipolar CH3CN in nondipolar C2Cl4 at T=300 K. The VH spectrum contains a strong narrow peak due to a slowly relaxing longitudinal orientation mode. This peak is absent in the HV spectrum, and it disappears from the VH spectrum when the CH3CN concentration is reduced to 8%. This observation is consisten...

2005
SHAHBUDIN H. RAHIMTOOLA

We prospectively evaluated 46 patients who had intrahisian conduction delay. Twenty-three had a split His potential and 23 had a prolonged HV interval with a normal QRS complex. In those with a split His, the interval between the two His potentials averaged 32.7 msec (range 9-90 msec); in nine patients this split His was demonstrated only by atrial pacing. The 20 patients from this group with 1...

Journal: :IEEE Trans. on Circuits and Systems 2007
Orly Yadid-Pecht Mona E. Zaghloul Denise Wilson

T HE articles contributed to this Special Section on Smart Sensors were inspired by the papers presented at the 2005 IEEE International Symposium on Circuits and Systems (ISCAS). The growing field of " smart sensors " caught our attention and prompted discussion on a Special IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS issue dedicated to this important topic. Recent research has ...

Journal: :Nuclear Instruments and Methods in Physics Research 2022

ALDO2 is a multi-function, adjustable, low dropout linear regulator designed in onsemi I3T80 0.35~$\mu$m HV CMOS technology for use HEP detectors that adopt silicon photomultipliers (SiPMs). The chip features four independent regulators, two voltage channels (max 3.3 V) used to filter and stabilize the power supply of front-end chips, 70 V), specifically provide bias arrays SiPMs. Each can be i...

2013
Francine H. Jacobs

OBJECTIVE: To test, with a sample of adolescent mothers (16–20 at childbirth) and their first-born infants/toddlers (average age 1 year), whether the impact of a home visiting (HV) child maltreatment prevention program was moderated by maternal depression. METHODS: The study design was a randomized controlled trial of Healthy Families Massachusetts, a statewide child maltreatment prevention pro...

2013
Akshata Raut Narendra Bhagat

This paper gives a comparative analysis of an inductorless Complementary Metal Oxide Semiconductor (CMOS) Single-ended current-mode Transimpedance Amplifier (TIA) intended for use in front-end Optical communication for wideband operation. This technique uses N similar TIAs in parallel configuration to boost the overall bandwidth as well as the transimpedance gain which is not possible with volt...

Journal: :Micromachines 2016
Jose Luis Muñoz-Gamarra Arantxa Uranga Núria Barniol

This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a commercial complementary metal oxide semiconductor (CMOS) technology (ST 65 nm) following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V), good ION/IOFF (103) ratio, abrupt subthreshold swing...

2007
J. Ervin A. Balijepalli V. Kushner A. Shanmugam B. Bakkaloglu T. J. Thornton

Silicon-on-insulator MESFETs have been fabricated using standard CMOS process flows and their characteristics have been measured over a temperature range of –180°C to + 300°C. From the measured data a TOM3 Spice model has been extracted. The Spice model has been used to simulate a two-stage operational transconductance amplifier and a voltage controlled oscillator. The circuit simulations show ...

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