Surface chemistry studies of the chemical mechanical planarization ~CMP! of copper are presented in this paper. Blanket copper samples were polished with an acidic alumina-based slurry which contains an organic acid salt ~phthalic acid salt! and an oxidizer (H2O2!. Surface studies using X-ray photoelectron spectroscopy ~XPS! were performed on copper samples after chemical etching or CMP in orde...

This work characterized the Cl2/HBr ion-enhanced plasma-surface interactions with poly-silicon as a function of the gas composition, ion energy, ion incident angle and other important process parameters. A realistic inductively coupled plasma beam apparatus capable of generating ions and neutrals representative of a real commercial etcher was constructed and utilized to simulate accurately a hi...

The etching of SiO2 layers from silicon surfaces is one of the most critical steps in wet processing technology. Although numerous studies have been performed to analyze the mechanisms and kinetics of these processes, little attention has been given to monitoring and controlling the chemical concentrations in the process baths. Chemical concentration control is becoming crucial to wafer process...

Porous silicon (PSi) is a versatile nanomaterial which has been utilized in several applications such as optical switching, drug delivery and sensors since its discovery in 1991. This material has been extensively investigated as an optical sensor due to its high surface area, high sensitivity and variety of optical transduction possibilities, e.g. changes in uorescence or reectance (interfer...

Desorption/ionization on porous silicon mass spectrometry (DIOS-MS) is a novel method for generating and analyzing gas-phase ions that employs direct laser vaporization. The structure and physicochemical properties of the porous silicon surfaces are crucial to DIOS-MS performance and are controlled by the selection of silicon and the electrochemical etching conditions. Porous silicon generation...