For infrared photo-detection in mid-wavelength and long-wavelength range, mercury cadmium telluride (MCT) semiconductor alloys remain the most widely used material system despite its major disadvantages of intrinsic Auger recombination and small effective mass. Type-II superlattices (T2SL) have been proposed as possible alternatives to MCT because they may overcome these problems by flexible an...

We refine a technique used by B. Boyce to change the carrier concentration level of thin YBa2Cu3O7-δ (YBCO) films. The purpose of this is to eventually study the superconductor to insulator transition that takes place in YBCO as carrier concentration level decreases. Introduction. For high carrier densities, YBCO is a d-wave superconductor, and its superfluid density has either a linear or a qu...

Using GaAs epilayers with arsenic precipitates (GaAs:As) as the photoconductive material in a broad-band optoelectronic terahertz beam system, we have generated and detected freely propagating, subpicosecond electromagnetic pulses. The receiver signal gave a measured integrated pulse width of 0.71 ps. Fast photoconductive rise times have been achieved which are characteristic of good mobility G...

PURPOSE The aim of this study was to examine the in vivo characteristics and levels of integration and degradation of a ready-to-use bone grafting block with elastic properties (elastic block) for the use in surgery. MATERIALS AND METHODS Thirty-six male Wistar rats underwent surgical creation of a well-defined bone defect in the tibia. All created defects - one per animal - were filled with ...

-A theory for optical heating in semiconductors has been formulated in terms of the coupled diffusion equations for heat and excess carriers. Closedform solutions for the region near the surface of the material have been obtained in the general case where the optical and transport parameters of the semiconductor are allowed to depend in an arbitrary way on temperature and laser-generated carrie...

InGaAsP grown by He plasma assisted Molecular Beam Epitaxy has a 15 ps carrier lifetime and a sharp band edge allowing for an ultrafast response and a strong optical nonlinearity at the telecommunications wavelength of 1.55 μm. S.D. Benjamin, Li Qian, J.E. Ehrlich, P.W.E. Smith, B.J. Robinson, D.A. Thompson Picosecond carrier lifetime in InGaAsP... 1 Picosecond Carrier Lifetime in InGaAsP Grown...