Carbon Nanotube Field Effect Transistor (CNTFET) has a wide scope in the field of Nanotechnology. These are currently considered as the replacement to the Si MOSFET. These devices show the ballistic transport in the current conduction. In this paper, a Verilog-A formulation of the Stanford compact model is used for the simulation of different logic gates in Cadence and finally Mod-16 Counter is...

Carbon nanotubes are novel materials with unique electrical and mechanical properties. Here we present results on their atomic structure and mechanical properties in the adsorbed state, on ways to manipulate individual nanotubes, on their electrical properties and, finally, on the fabrication and characteristics of nanotube-based electron devices. Specifically, Ž . atomic force microscopy AFM a...

We report the effect of electrochemical oxidation in nitric acid on the electronic properties of epitaxial graphene (EG) grown on silicon carbide substrates; we demonstrate the availability of an additional reaction channel in EG, which is not present in graphite but which facilitates the introduction of the reaction medium into the graphene galleries during electro-oxidation. The device perfor...

Aggressive scaling of silicon technology over the years has pushed CMOS devices to their fundamental limits. Pioneering works on carbon nanotube during the last decade possessing exceptional electrical properties have provided an intriguing solution for high performance integrated circuits. So far, at best, carbon nanotubes have been considered only for the channel, with metal electrodes being ...

The performance of carbon nanotube-based transistor is analyzed. The effect of geometrical parameters on the device performance is investigated as d tunnel. We have studied the influence of the material parameters, such as the height of the SB (ΦSB), and some other physical parameters like the nanotube chirality, the gate oxide thickness and the gate oxide dielectric permittivity Our results sh...

We develop short-channel transistors using solution-processed single-walled carbon nanotubes (SWNTs) to evaluate the feasibility of those SWNTs for high-performance applications. Our results show that even though the intrinsic field-effect mobility is lower than the mobility of CVD nanotubes, the electrical contact between the nanotube and metal electrodes is not significantly affected. It is t...

Experiments to determine the resistivity and charge-carrier mobility in semiconducting carbon nanotubes are reviewed. Electron transport experiments on long chemical-vapour-deposition-grown semiconducting carbon nanotubes are interpreted in terms of diffusive transport in a field-effect transistor. This allows for extraction of the field-effect and saturation mobilities for hole carriers, as we...

A simple scheme for determination of spin-orbit coupling strength in spinbased optomechanics with carbon nanotubes is introduced, under the control of a strong pump field and a weak signal field. The physical mechanism comes from the phonon induced transparency (PIT), by relying on the coherent coupling of electron spin to vibrational motion of the nanotube, which is analogous to electromagneti...

In this paper, a full adder cell based on majority function using Carbon-Nanotube Field-Effect Transistor (CNFET) technology is presented. CNFETs possess considerable features that lead to their wide usage in digital circuits design. For the design of the cell input capacitors and inverters are used. These kinds of design method cause a high degree of regularity and simplicity. The proposed des...