نتایج جستجو برای: bulk carriers

تعداد نتایج: 121387  

Journal: :Physical Review B 2021

${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ is an ideal three-dimensional topological insulator in which the chemical potential can be brought into bulk band gap with antimony doping. Here, we utilize ultrafast time-resolved transient reflectivity to characterize photoexcited carrier decay ${\mathrm{Bi}}_{2\ensuremath{-}x}{\mathrm{Sb}}_{x}{\mathrm{Se}}_{3}$ nanoplatelets. We report a substantial slowi...

Journal: :Journal of The Electrochemical Society 2022

Electrochemical impedance spectroscopy (EIS) is commonly used to investigate the kinetics of mixed ionic–electronic conductor (MIEC) electrodes. Across various applications, MIECs exhibit ionic (e.g., insertion) and/or electronic electrocatalytic) charge transfer reactions at electrode/electrolyte interface. Bulk storage and transport carriers also couple with these interfacial reactions. Here,...

2011
F. Schanovsky W. Gös T. Grasser

Nonradiative multiphonon capture of carriers into the gate dielectrics of metal-oxide-semiconductor systems and its involvement with the negative bias temperature instability is discussed. A simple method for the extraction of the line-shape function from an atomistic bulk defect model is suggested and applied to defect models in alpha quartz. Electronic structures are described using density f...

2012
A. A. SMALES

where d = thickness of the film, ,o = resistivity of the film, = resistivity of the bulk material having the same structure and approximately the same number of defects as the films, l0 = mean free path of the charge carriers. The values of l0 calculated by the two methods were found to agree satisfactorily. Figs. 7 and 8 show the variation of the Hall mobility (/̂ H) with film thickness and sub...

Journal: :Physical review letters 2010
W Kuehn P Gaal K Reimann M Woerner T Elsaesser R Hey

Electrons in bulk n-doped GaAs at a lattice temperature of 300 K are driven by ultrashort high-field transients of up to 300 kV/cm in the terahertz frequency range. In the lowest conduction band the carriers show coherent ballistic motion, which is detected via the THz field emitted by them. This partial Bloch oscillation is reproduced by a quantum-kinetic theory of coherent transport on ultraf...

Journal: :Physical review 2021

We present a coupled-wire construction of model with chiral fracton topological order. The combines the known $\nu=1/m$ Laughlin fractional quantum Hall states planar p-string condensation mechanism. bulk supports gapped immobile excitations that generate hierarchy mobile composite excitations. Open boundaries are and gapless, can be used to demonstrate quantized conductance where composites ac...

Journal: :Physical review applied 2021

Nanoribbons of topological insulators (TIs) have been suggested for a variety applications exploiting the properties topologically protected surface Dirac states. In these proposals it is crucial to achieve high tunability Fermi energy, through point while preserving mobility involved carriers. Tunable transport in TI nanoribbons has achieved by chemical doping materials so reduce bulk carriers...

Journal: :International Journal of Engineering and Applied Sciences (IJEAS) 2020

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