Although InP/GaAs0.51Sb0.49/InP DHBT has recently attracted much interest, some sensitive material parameters are still uncertain. We detailed the simulation methodology used to evaluate bandgap energy, minority carrier lifetime and band gap narrowing effect. Moreover, the high-injection effect is analysed as resulting from electron parasitic barrier formation at base-collector junction.

The history-dependent recurrence theory for multiplication noise in avalanche photodiodes (APDs), developed by Hayat et al., is generalized to include inter-layer boundary effects in heterostructure APDs with multilayer multiplication regions. These boundary effects include the initial energy of injected carriers as well as bandgap-transition effects within a multilayer multiplication region. I...

This paper describes the design of a bandgap reference, implemented in 0.50 μm CMOS technology. The circuit generates a reference voltage of 1.2218V. It can operate between 20oC & 70o C. Total variation of reference voltage within the temperature range is 2.6mV which is 0.213% of the reference voltage. This circuit works in a current feedback mode, and it generates its own reference current, re...

Using a combination of experimental and theoretical techniques we present the dependence of the bandgap Eg and the spin orbit splitting energy so, with Bi concentration in GaAsBi/GaAs samples. We find that the concentration at which so,> Eg occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment.

Thieno[3,2-b]thienobis(silolothiophene), a new electron rich hexacyclic monomer has been synthesized and incorporated into three novel donor-acceptor low-bandgap polymers. By carefully choosing the acceptor co-monomer, the energy levels of the polymers could be modulated and high power conversion efficiencies of 5.52% were reached in OPV devices.

Semiconductors with a moderate bandgap have enabled modern electronic device technology, and the current scaling trends down to nanometer scale have introduced two-dimensional (2D) semiconductors. The bandgap of a semiconductor has been an intrinsic property independent of the environments and determined fundamental semiconductor device characteristics. In contrast to bulk semiconductors, we de...