نتایج جستجو برای: band gap energy

تعداد نتایج: 899121  

As thermalisation loss is the dominant loss process in the quantum dot intermediate band solar cells (QD-IBSCs), it has been investigated and calculated for a QD-IBSC, where IB is created by embedding a stack of InAs(1-x) Nx QDs with a square pyramid shape in the intrinsic layer of the AlPySb(1-y) p-i-n structure. IB, which is an optically coupled but electrically isolated mini-band, divides th...

In this paper, a photonic crystal waveguide with point defects and lattice constant perturbations of +5%, -5% are being investigated. Firstly waveguide structures with constant and specific parameters are being studied and photonic band gap diagrams for TE/TM modes are depicted; then pulse propagation in the frequencies available in the band gap are shown. After that, effects of parameters like...

1999
R. K. Lee O. J. Painter B. D’Urso A. Scherer

An active, photonic band gap-based microcavity emitter in the near infrared is demonstrated. We present direct measurement of the spontaneous emission power and spectrum from a microcavity formed using a two-dimensional photonic band gap structure in a half wavelength thick slab waveguide. The appearance of cavity resonance peaks in the spectrum correspond to the photonic band gap energy. For d...

1995
S. A. Tomás O. Vigil

Study of the band–gap shift in CdS films: Influence of thermal annealing in different atmospheres. Abstract We study by photoacoustic spectroscopy the band–gap shift effect of CdS films. The CdS films were grown by chemical bath deposi-tion and exposed to different annealing atmospheres over a range of temperature in which the sample structure is observed to change. We show the band–gap evoluti...

Journal: :The Journal of chemical physics 2006
Myrta Grüning Andrea Marini Angel Rubio

Theoretically the Kohn-Sham band gap differs from the exact quasiparticle energy gap by the derivative discontinuity of the exchange-correlation functional. In practice for semiconductors and insulators the band gap calculated within any local or semilocal density approximations underestimates severely the experimental energy gap. On the other hand, calculations with an "exact" exchange potenti...

Journal: :Nanoscale 2015
Tu Hong Bhim Chamlagain Tianjiao Wang Hsun-Jen Chuang Zhixian Zhou Ya-Qiong Xu

We investigate the photocurrent generation mechanisms at a vertical p-n heterojunction between black phosphorus (BP) and molybdenum disulfide (MoS2) flakes through polarization-, wavelength-, and gate-dependent scanning photocurrent measurements. When incident photon energy is above the direct band gap of MoS2, the photocurrent response demonstrates a competitive effect between MoS2 and BP in t...

2014
D. P. Samajdar S. Dhar

The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E + levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E - energy for the holes shows a reverse trend. The model is also...

Journal: :Chemical communications 2016
Hongwei Huang Ke Xiao Shixin Yu Fan Dong Tierui Zhang Yihe Zhang

We herein report a facile and general approach to modulating the band energy level of semiconductors for visible-light photocatalysis via iodide surface decoration. This strategy enables the wide-band-gap Bi2O2CO3 to possess a continuously tunable band gap and profoundly boosted visible-light photocatalytic performance for dye degradation and NO removal.

Journal: :Physical review letters 2005
A Bendounan F Forster F Reinert B Kierren Y Fagot-Revurat D Malterre

The compressed, incommensurate approximately (9.5 x 9.5) moire superstructure of the Ag monolayer on Cu(111) displays a filled surface state band with a Fermi energy gap at the Brillouin zone boundary. By contrast, the surface band is gapless for the less compressed, commensurate (9 x 9) moire of two Ag layers. A simple estimate of the energy gain rendered by opening this gap gives a value simi...

Journal: :Physical review letters 2009
Kin Fai Mak Chun Hung Lui Jie Shan Tony F Heinz

It has been predicted that application of a strong electric field perpendicular to the plane of bilayer graphene can induce a significant band gap. We have measured the optical conductivity of bilayer graphene with an efficient electrolyte top gate for a photon energy range of 0.2-0.7 eV. We see the emergence of new transitions as a band gap opens. A band gap approaching 200 meV is observed whe...

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