Understanding the nonlinear optical processes in semiconductor nanostructures leads to possible applications in areas including laser amplifiers, optical switches, and solar cells. Here we present a study of the frequency degenerate twophoton absorption (2PA) spectrum of a series of PbS and PbSe quantum dots (QDs). The influence of the quantum confinement is analyzed using a four-band model whi...

In this work, we have studied the miniband and minigaps of GaN/AlN constant total effective radius multi-shells quantum dots (CTER-MSQDs) and Rings (CTERMSQRs).We have investigated effects of the Hydrogenic donor impurities, quantum dots and rings radii, and the number of wells on miniband formation by sub-band energy calculations. We show that in these systems, minigaps can be created and then...

The charge density and pair correlation function of three interacting electrons confined within a two-dimensional disc-like hard wall quantum dot are calculated by full numerical diagonalization of the Hamiltonian. The formation of a Wigner-molecule in the form of equilateral triangular configuration for electrons is observed as the size of the dot is increased. PACS Numbers: 73.20.Dx, 73.61.-r

We derive a nonsymmetrized 8-band effective-mass Hamiltonian for quantumdot heterostructures (QDHs) in Burt’s envelope-function representation. The 8×8 radial Hamiltonian and the boundary conditions for the Schrödinger equation are obtained for spherical QDHs. Boundary conditions for symmetrized and nonsymmetrized radial Hamiltonians are compared with each other and with connection rules that a...

Band edge positions of semiconductors determine their functionality in many optoelectronic applications such as photovoltaics, photoelectrochemical cells and light emitting diodes. Here we show that band edge positions of lead sulfide (PbS) colloidal semiconductor nanocrystals, specifically quantum dots (QDs), can be tuned over 2.0 eV through surface chemistry modification. We achieved this rem...

Introduction: Future high-speed systems will, in all probability, require the monolithic integration of electronic circuits and optoelectronic components on silicon substrates. An urgent need in such technology is the development of high performance and reliable electrically-injected light sources that can be integrated on silicon in a CMOS-compatible process. Self-organised quantum dot (QD) la...

In this paper, the Lamb shift in systems with non-degenerate energy levels, put in the electromagnetic environment provided by two infinite parallel conducting plates, is analyzed. An explicit formula giving the relative Lamb shift (as compared to the standard one in vacuum) is derived for spherical semiconductor Quantum Dots (QD), via a careful mathematical treatment of divergences in the calc...

We have developed a fluorescence resonance energy transfer (FRET) probe based on the conjugation of a quantum dot (QD) with dye (YOYO-3) intercalated DNA. The FRET-inducing electrostatic coupling of DNA and the QD made structural changes to the QD-DNA conjugates, which significantly prevented an enzymatic reaction between the DNA and a conventional restriction endonuclease (EcoRI).

A quantum dot (QD) system provides various physics of nanostructures. So far, many types semiconductor QD structures have been fabricated and investigated experimentally analyzed theoretically. Presently, systems attracted considerable attention as units for the qubit computers. Therefore, it is vital to integrate measurement devices in addition qubits. Here, we theoretically investigate side-Q...