نتایج جستجو برای: asymmetric quantum dots

تعداد نتایج: 367061  

The acid oxidation of carbon nanotube generally results in opening the close ends of the nanotube and to make surface modifications. Herewith, Multiwall carbon nanotubes (MWCNTs) were oxidized in acids at high temperature experimental conditions which led to the formation of graphene quantum dots (GQDs).   High resolution transmission electron microscope (HRTEM), energy dispersive X-ray spectro...

2016
Matthew Otten Jeffrey Larson Misun Min Stefan M. Wild Matthew Pelton Stephen K. Gray

A system of two or more quantum dots interacting with a dissipative plasmonic nanostructure is investigated in detail by using a cavity quantum electrodynamics approach with a model Hamiltonian. We focus on determining and understanding system configurations that generate multiple bipartite quantum entanglements between the occupation states of the quantum dots. These configurations include all...

2014
Paulina Ziółczyk Ewa Miller Małgorzata Przybyt

The paper presents a survey of literature on the structure and optical properties of ZnS and copper ion-doped ZnS quantum dots. The effect of other metal dopants on the spectral properties of ZnS:Cu quantum dots was also considered. The influence of such parameters as dopant concentration, temperature of the synthesis and compounds which form or modify the additional layer on dots on spectral p...

in this work, some of the lattice plasmon quantum features are examined. Initially, the interaction of the far-field photonic mode and the nanoparticle plasmon mode is investigated. We probe the optical properties of the array plasmon that are dramatically affected by the array geometry. It is notable to mention that the original goal of this work is to examine the quantum feature of the array ...

2012
Kenan Koç Fatma Z Tepehan Galip G Tepehan

For this study, we prepared colloidal CdS quantum dots using 3-mercaptopropyltrimethoxysilane as capping agent. Colloidal CdS quantum dots were directly deposited on glass substrates by a spin-coating process. Coated substrates were heat-treated between 225°C and 325°C for various heat treatment time intervals to investigate the growth kinetics of the quantum dots. Results showed that sizes of ...

2013
S. C. Badescu Y. B. Lyanda-Geller T. L. Reinecke Ș. C. Bădescu

2004
F. Iikawa M. P. F. Godoy M. K. K. Nakaema M. J. S. P. Brasil M. Z. Maialle M. A. Degani E. Ribeiro G. Medeiros-Ribeiro W. Carvalho J. A. Brum

This paper focuses on recent results on the optical properties of self-assembled quantum dots involving typeI InGaAs/GaAs and type-II InP/GaAs interfaces. In the first part, we focus on the InGaAs/GaAs quantum dots, that were used to study the influence of a two-dimensional electron gas on the optical emission of single quantum dots. In the second part, we present the results on type-II InP/GaA...

2013
P. H. Tan D. Bougeard K. Brunner Walter Schottky

Related Articles All-optical tuning of the Stokes shift in PbS quantum dots Appl. Phys. Lett. 102, 071905 (2013) Long wavelength (>1.55μm) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals Appl. Phys. Lett. 102, 073103 (2013) Intraband optical transition in InGaAs/GaAs pyramidal quantum dots J. Appl. Phys. 113, 0643...

2011
Xiaolong Zhou Yonghai Chen Bo Xu

We have studied the electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure, i.e., with an In0.15Ga0.85As quantum well (QW) as capping layer above InAs quantum dots (QDs), via temperature-dependent photoluminescence, photo-modulated reflectance, and rapid thermal annealing (RTA) treatments. It is shown that the carrier transfer via wetting layer (WL) is impeded according...

2013
Y. Wang X. Yang T. C. He Y. Gao H. V. Demir X. W. Sun H. D. Sun

Related Articles Long wavelength (>1.55μm) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals Appl. Phys. Lett. 102, 073103 (2013) Intraband optical transition in InGaAs/GaAs pyramidal quantum dots J. Appl. Phys. 113, 064310 (2013) Development of polaron-transformed explicitly correlated full configuration interactio...

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