We will present brief overview on the electronic and transport properties of graphene nanoribbons focusing on the effect of edge shapes and impurity scattering. The low-energy electronic states of graphene have two non-equivalent massless Dirac spectrum. The relative distance between these two Dirac points in the momentum space and edge states due to the existence of the zigzag type graphene ed...

We investigate the combined influence of structural defects and uniaxial longitudinal strain on the electronic transport properties of armchair graphene nanoribbons using the numerical approach based on the semiempirical tight-binding model, the Landauer formalism, and the recursion method for Green functions. We calculate the conductance of graphene nanoribbons in the quantum coherent regime w...

Bottom-up assembled nanomaterials and nanostructures allow for the studies of rich unprecedented quantum-related mesoscopic transport phenomena. However, it can be difficult to quantify correlations between geometrical or structural parameters obtained from advanced microscopy measured electrical characteristics when they are made into macroscopic devices. Here, we propose a strategy connect na...

The electronic shell structure of triangular, hexagonal and round graphene quantum dots (flakes) near the Fermi level has been studied using a tight-binding method. The results show that close to the Fermi level the shell structure of a triangular flake is that of free massless particles, and that triangles with an armchair edge show an additional sequence of levels (“ghost states”). These leve...

Control of the edge topology of graphene nanostructures is critical to graphene-based electronics. A means of producing atomically smooth zigzag edges using electronic current has recently been demonstrated in experiments [Jia, Science 323, 1701 (2009)10.1126/science.1166862]. We develop a microscopic theory for current-induced edge reconstruction using density functional theory. Our calculatio...

Securing a semiconducting bandgap is essential for applying graphene layers in switching devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by introducing an asymmetry between the A and B sub-lattice sites. A recent transport measurement demonstrated the presence of a bandgap in a graphene layer where the asymmetry was introduced by placing a graphene layer o...

The realization of electronic devices based on heterostructures metallic, semiconducting, or insulating two-dimensional materials relies the ability to form structurally coherent and clean interfaces between them, vertically laterally. Lateral that fuse together two different in a well-controlled manner have attracted recent attention, but methods seamless dissimilar materials, such as graphene...

We studied experimentally and theoretically the electronic local density of states (LDOS) near single step edges at the surface of exfoliated graphite. In scanning tunneling microscopy measurements, we observed the ( √ 3 × √ 3)R30◦ and honeycomb superstructures both extending over 3−4 nm either from the zigzag or armchair edge. Calculations based on a density-functional derived nonorthogonal ti...