نتایج جستجو برای: ambipolar transport
تعداد نتایج: 274651 فیلتر نتایج به سال:
Band Structure Engineering of WSe2 Homo-Junction Interfaces In article number 2101763, June-Chul Shin, Gwan-Hyoung Lee, and co-workers demonstrate that vertical homo-junction consisting two flakes with different thicknesses shows anti-ambipolar transport behavior due to a thickness-induced band offset at the interface. The is tunneling-mediated interlayer recombination majority carriers electro...
The effects of ambipolar diffusion on the linear stability of weakly ionised accretion discs are examined. Earlier work on this topic has focused on axial magnetic fields and perturbation wavenumbers. We consider here more general field and wavenumber geometries, and find that qualitatively new results are obtained. Provided a radial wavenumber and azimuthal field are present along with their a...
Abstract Reduction of both the plasma density and toroidal flow speed, due to application predominantly n = 1 ( is mode number) resonant magnetic perturbation (RMP) for controlling edge localized in HL-2A tokamak, numerically investigated utilizing quasi-linear initial-value code MARS-Q (Liu et al 2013 Phys. Plasmas 20 042503). Simulation results reveal that neoclassical viscosity (NTV) three d...
Three main ambipolar compact models for Two-Dimensional (2D) materials based Field-Effect Transistors (2D-FETs) are reviewed: (1) Landauer model, (2) 2D Pao-Sah and (3) virtual Source Emission-Diffusion (VSED) model. For the Gauss quadrature method is applied, it summarizes all kinds of variants, exhibiting its state-of-art. aspects theoretical fundamentals rederived, electrostatic potentials e...
We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets. The RGO sheets suspended in water were assembled between prefabricated gold source and drain electrodes using ac dielectrophoresis. With the application of a backgate voltage, 60% of the devices showed p-type FET behavior, while the remaining 40% showed ambipolar behavio...
Herein we report the synthesis and characterization of a series of 6,12-diarylindeno[1,2-b]fluorenes (IFs). Functionalization with electron donor and acceptor groups influences the ability of the IF scaffold to undergo two-electron oxidation and reduction to yield the corresponding 18- and 22-π-electron species, respectively. A single crystal of the pentafluorophenyl-substituted IF can serve as...
We present the results of a 2-D, two fluid (ions and neutrals) simulation of the ambipolar filamentation process, in which a magnetized, weakly ionized plasma is stirred by turbulence in the ambipolar frequency range. The higher turbulent velocity of the neutrals in the most ionized regions gives rise to a non-linear force driving them out of these regions, so that the initial ionization inhomo...
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