There is great interest in improving the electrical reliability of GaN high electron mobility transistors (HEMT). For this, the degradation mechanisms must be identified. Under high voltage stress the drain current is seen to degrade in a partially recoverable manner. This is attributed to the introduction of carrier trapping, but it also reveals the presence of additional permanent degradation...

The forward and reverse bias I–V, C–V, and G/x–V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al0.22Ga0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiNx insulator layer were measured at room temperature in order to investigate the effects of the insulator layer (SiNx) on the main electrical parameters such as the ideality factor (n), zero-bias barr...

Effects of stress in passivation films on the electrical properties of (0001) AlGaN/GaN HEMTs are numerically analysed in the framework of the edge force model with anisotropical characteristics in elastic properties of group-III nitrides explicitly considered. Practical compressive stresses in passivation films induce negative piezoelectric charges below the gates and bring forth a-few-volt sh...

Significant advances in the development of high electron-mobility field-effect transistors (HEMTs) have resulted in cryogenic, low-noise amplifiers (LNAs) whose noise temperatures are within an order of magnitude of the quantum noise limit (hf/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting–insulator– supercon...

Influence of the energy relaxation of the channel electrons on the performance of AlGaN/GaN high-electron mobility transistors (HEMTs) has been investigated using self-consistent solution to the coupled Schrödinger equation and Poisson equation. The first quantized energy level in the inversion layer rises and the average channel electron density decreases when the channel electric field increa...

The threshold voltage instability in p-GaN gate high electron mobility transistors (HEMTs) has been brought into evidence recent years. It can lead to reliability issues switching applications, and it be followed by other degradation mechanisms. In this paper, a Vth measurement protocol established for SiC MOSFETs is applied GaN HEMTs: the triple sense protocol, which uses bias precondition tra...

Abstract A physics-based analytical model for GaN high-electron-mobility transistors (HEMTs) with non-recessed- and recessed-gate structure is presented. Based on this model, the two-dimensional electron gas density (2DEG) thereby on-state resistance breakdown voltage can be controlled by varying barrier layer thickness Al mole fraction in non-recessed depletion-mode HEMTs. The indicates that 2...

Two simple class-F NVI1VIIC power amplifiers are described using 0.7tm field-plated GaN HEMT devices. One circuit was designed for operation at 2.0 GHz and achieved a power-added-efficiency of 50%, 38 dBm output power, and 6.2 W/mm power density. A second circuit was designed at 2.8 GHz and achieved a PAE of 46% with 37 dBm output power and 7.0 W/mm power density.

has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, p223511, 2014]. The resulting structures boast the highest reported mobility for InGaN channels and superior transport at high temperature, according to the research team. Nitride semicondu...