SnO2 nanoparticles with different percentage of Al (5%, 15%, and25%) were synthesized by sol-gel method. The structure and nature of nanoparticles are determined by of X-ray diffraction analysis. Also, morphology of the samples is evaluated by SEM. Moreover, the optical properties of the samples are investigated with UV-Visible and FT-IR. The XRD patterns are in...

Correction for 'Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2 on fluorine-doped tin oxide nanoparticle films' by Isvar A. Cordova, et al., Nanoscale, 2015, 7, 8584-8592.

Group IIIA elements, Al, Ga, or In, etc., doped Sb-Te materials have proven good phase change properties, especially the superior data retention ability over popular Ge2Sb2Te5, while their phase transition mechanisms are rarely investigated. In this paper, aiming at the phase transition of Al-Sb-Te materials, we reveal a dominant rule of local structure changes around the Al atoms based on ab i...

We present results from an ion microprobe study of REE-doped and natural concentration plagioclase-basalt run products of Drake (1972) that carries on from our earlier study (Bindeman et al., 1998). The goals of this work are (1) to determine plagioclase/melt partition coefficients for all REE for four analyzed plagioclase compositions (An40–80); and (2) to determine whether doping with REE inf...

The adsorption behavior of the anti-neurodegenerative drug Levodopa (LD) on pristine and aluminum-doped (Al-doped) boron nitride nanotubes (BNNTs) has been investigated in current study using density functional theory (DFT) approach at B3LYP/6-31G** level theory. aim was to improve expand carriers used biomedical systems, i.e., delivery systems. binding qualities pure doped BNNT complexes as ad...

Al-doped ZnO thin films were prepared on the (0001) sapphire (c-Al2O3) substrates by atomic layer deposition (ALD) using alternating pulses of Zn(C2H5)2, Al(CH3)3 and H2O precursors and post-deposition high-temperature annealing. Photoluminescence (PL) spectroscopy showed that the threshold of stimulated emission decreases with increasing Al concentration, from 49.2 kW/cm of the ZnO film to 12....

We report systematic growth optimization of high Al-content AlGaAs, AlAs, and associated modulation-doped quantum well (QW) heterostructures on on-axis and misoriented GaAs (111)B by molecular beam epitaxy. Growth temperatures TG> 690 C and low As4 fluxes close to group III-rich growth significantly suppress twin defects in high-Al content AlGaAs on on-axis GaAs (111)B, as quantified by atomic ...