نتایج جستجو برای: کامپوزیت al2o3
تعداد نتایج: 16863 فیلتر نتایج به سال:
The ion-sensitive field effect transistor (ISFET) of chemical sensors has been used due to many reasons which have the advantages of small size, light weight and fast response by semiconductor processing. In recently, the sensing membranes applied to high-k materials such as Al2O3, ZrO2, HfO2, TiO2 and Ta2O5 for pH-ISFET were investigated because of the high sensitivity [1]. The Al2O3 film amon...
The production of clean steel involves the controlling, elimination, or modification of nonmetallic inclusions. In Al-killed steels, alumina is the main type of inclusion. Calcium treatment, by wire feeding, is commonly used to modify solid alumina inclusions to calcium aluminates, which exists in a fully or partially liquid phase. Liquid inclusions can improve steel castability, but make inclu...
آلومینایدهای نیوبیوم به خاطر داشتن نقطه ذوب بالا، مدول الاستیک بالا و دانسیته بسیار پایین تر نسبت به سوپرآلیاژهای پایه نیکل انتخابی بسیار مناسب برای ساخت قطعات دما بالا می باشند. با وجود مزایای بسیار زیاد، این ترکیبات دارای نقاط ضعفی همچون انعطاف پذیری پایین در دمای محیط و مقاومت به اکسیداسیون نامناسب در دماهای بالای 700 درجه سانتیگراد می باشند. از این رو، برای بالا بردن انعطاف پذیری این ترکیبا...
The effect of -Al2O3 particles on the electrochemical codeposition behaviour of Co–Ni alloys from sulfamate electrolyte was investigated by codeposition experiments, zeta potential and electrochemical methods. The results indicate that the presence of Al2O3 particles in Co–Ni sulfamate electrolytes contributes to the preferential codeposition of Co. Moreover, increasing Co2+ concentration also ...
The thermal atomic layer etching (ALE) of Al2O3 can be performed using sequential and self-limiting reactions with trimethylaluminum (TMA) and hydrogen fluoride (HF) as the reactants. The atomic layer deposition (ALD) of AlF3 can also be accomplished using the same reactants. This paper examined the competition between Al2O3 ALE and AlF3 ALD using in situ Fourier transform infrared (FTIR) vibra...
We report the characterization of aluminum oxide (Al2O3) films which are grown on Si substrates by electron beam evaporator. This paper focuses on the characteristic variation of Al2O3 films depending on the different annealing techniques, such as post-deposition annealing and post-metallization annealing. The capacitance-voltage (C-V) curves indicate a negative charge and interface trap charge...
In this study, the phase transition characteristics of flame-synthesized γ-Al2O3 nanoparticles to α-Al2O3 have been investigated. The nanoparticles were synthesized by using a coflow hydrogen diffusion flame. The phase transition and particle characteristics of the Al2O3 nanoparticles were determined by examining the crystalline structure and the shape of the collected nanoparticles before and ...
In this study, γ-Al2O3 particles were dispersed in p-type Bi0.4Sb1.6Te3 through mechanical alloying to form γ-Al2O3/Bi0.4Sb1.6Te3 composite powders. The composite powders were consolidated using vacuum hot pressing to produce nanoand microstructured composites. Thermoelectric (TE) measurements indicated that adding an optimal amount of γ-Al2O3 nanoparticles improves the TE performance of the fa...
Structures and testing methods for measuring the adhesion strength, minimum bending diameter, and bending fatigue performance of thin-film polymer electronic architectures were developed and applied to Parylene–metal–Parylene systems with and without the moisture barrier Al2O3 [deposited using atomic layer deposition (ALD)]. Parylene–metal– Parylene interfaces had the strongest average peel tes...
The aluminum oxide (Al2O3) thin films with various thicknesses under 50 nm were deposited by atomic layer deposition (ALD) on silicon substrate. The surface topography investigated by atomic force microscopy (AFM) revealed that the samples were smooth and crack-free. The ellipsometric spectra of Al2O3 thin films were measured and analyzed before and after annealing in nitrogen condition in the ...
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