Here we report a low-cost and "green" phosphine-free route for the size- and shape-controlled synthesis of high-quality zinc blende (cubic) ZnSe nanocrystals. To avoid the use of expensive and toxic solvents such as trioctylphosphine (TOP) or tributylphosphine (TBP), SeO(2) was dispersed in 1-octadecene (ODE) as a chalcogen precursor. It has been found that the temperature and the surface ligan...

As proposed in the LUCIFER project, ZnSe crystals are attractive materials to realize scintillating bolometers aiming at the search for neutrinoless double beta decay of the promising isotope 82Se. However, the optimization of the ZnSe-based detectors is rather complex and requires a wide-range investigation of the crystal features: optical properties, crystalline quality, scintillation yields ...

Oxygen plasma effects on optical properties of ZnSe films" (2002). Zinc selenide is an infrared transparent semiconductor material being considered for use in space as an infrared optical coating. In this work, zinc selenide thin films of different thicknesses were exposed to an electron cyclotron resonance generated oxygen plasma, often used to ''simulate'' the low earth orbital environment. T...

Wide-bandgap semiconductors such as zinc selenide (ZnSe) have become popular for ultraviolet (UV) photodetectors due to their broad UV spectral response. Schottky barrier detectors made of ZnSe in particular have been shown to have both low dark current and high responsivity. This paper presents the results of electrical and optical characterization of UV sensors based on ZnSe/Ni Schottky diode...

Circularly and linearly polarized radiation due to spatially indirect optical transitions is studied in semimagnetic (Zn,Mn)Se/BeTe and nonmagnetic ZnSe/BeTe quantum-well structures with a type-II band alignment. Because of the giant in-plane anisotropy of the optical matrix elements related to a particular interface, complete spin orientation of photocarriers induced by magnetic fields leads n...

We present the synthesis and characterization of nanocrystalline II VI semiconductors of mixed composition CdSe ZnSe CdS grown in fatty acid Langmuir Schaefer multi layer templates The controlled production of i homogeneous nanocrystalline CdxZn xSe alloys and ii heterogeneous mixtures of di erent pure composition II VI semiconductors such as CdSe and ZnSe provides in addition to the size contr...

ZnSe and other zinc chalcogenide semiconductor materials can be doped with divalent transition metal ions to create a mid-IR laser gain medium with active function in the wavelength range 2 – 5 microns and potentially beyond using frequency conversion. As a step towards fiberized laser devices, we have manufactured ZnSe semiconductor fiber waveguides with low (less than 1dB/cm at 1550nm) optica...

The linear absorption spectra of GaP, TiO2, ZnSe, and ZnS are measured in their transparency range using a twocolor, excite-probe Z-scan. ZnS has the lowest absorption coefficient ( 10 5 cm ) in the wavelength range 840–900 nm, making it an excellent material for use as a luminescence extracting lens in semiconductor laser cooling experiments. Direct observation of two-photon absorption in ZnSe...

Chemical reductants of sub-conduction-band potentials are demonstrated to induce large photoluminescence enhancement in colloidal ZnSe-based nanocrystals. The photoluminescence quantum yield of colloidal Mn(2+)-doped ZnSe nanocrystals has been improved from 14% to 80% simply by addition of an outer-sphere reductant. Up to 48-fold redox brightening is observed for nanocrystals with lower startin...