A high-speed and hardware-only algorithm using a center of mass method has been proposed for single-detector fluorescence lifetime sensing applications. This algorithm is now implemented on a field programmable gate array to provide fast lifetime estimates from a 32 × 32 low dark count 0.13 μm complementary metal-oxide-semiconductor single-photon avalanche diode (SPAD) plus time-to-digital conv...

We demonstrate a new single-photon avalanche diode (SPAD) device, which utilizes the silicon-dioxide shallow-trench isolation (STI) structure common to all deep-submicron CMOS technologies, both for junction planarization and as an area-efficient guard-ring. This makes it possible to achieve an order-of-magnitude improvement in fill factor and a significant reduction in pixel area compared with...

Time-of-flight (TOF) measurements using pulsed light beams for 3D imaging or profiling require either a costly mechanical device to scan the scene [1] or a short and highly energetic optical pulse to flood the scene with photons [2]. An alternative to these methods is the use of detector arrays based on single photon avalanche diodes (SPADs) operating in Geiger mode [3]. These devices accuratel...

In the next generation Internet, the network will evolve from a plain communication medium into one that provides endless services to the users. These services will be composed of multiple cooperative distributed application elements. We name these services overlay applications. The cooperative application elements within an overlay application will build a dynamic communication mesh, namely an...

Abstract– The design and fabrication of integrated microlenses for CMOS single-photon avalanche diodes (SPADs) is presented in this paper. The micro-lens exploits the avalanche propagation phenomenon occurring in abrupt single-sided junctions and is achieved by carful design of the SPAD in a standard CMOS process. In contrast to an optical micro-lens, the proposed technique is more robust to m...

We developed a fully digital implementation of the Silicon Photomultiplier. The sensor is based on a single photon avalanche photodiode (SPAD) integrated in a standard CMOS process. Photons are detected directly by sensing the voltage at the SPAD anode using a dedicated cell electronics block next to each diode. This block also contains active quenching and recharge circuits as well as a one bi...

a pot experiment was carried out to determine the effect of foliage spraying of silicon (si) on growth and ornamental characteristics of calendula grown under salt stress and greenhouse conditions. a factorial experiment based on completely randomized design was conducted with 3 levels of si (0, 50 and 100 mg/l) and 3 levels of nacl (0, 100 and 200 mm) with 4 replications. at flowering stage, s...

In the past decades different methods based on magnetic resonance imaging (MRI) and positron emission tomography (PET) have been developed to image a variety of hemodynamic parameters in tissue. However, simultaneous high resolution imaging of oxyand deoxyhemoglobin is not yet possible in clinical practices with millimeter accuracy. Nearinfrared Spectroscopy (NIRS) is a well established techniq...