We are focusing on the developed by us the mathematical analysis methods of the data obtained by three independent spectroscopic techniques and their application to study of atomic and chemical composition profiles across the air-exposed systems SrTiOx/B/Si with interfacial layers (B: SiO2, Si3N4 and HfO2) grown by the atomic layer deposition technique. It was established that the material of t...

X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InPxOy layer is easily formed at the HfO2/InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved ...

This experimental study tackles the question how oxide ceramics (ZrO2 and HfO2) respond to the simultaneous exposure to two extreme conditions, pressures up to several ten GPa and irradiation with highly energetic (MeV-GeV) heavy ion projectiles. The combination of these two extreme conditions influences the materials in ways none of those two conditions alone could. In both materials, the expo...

Hafnia is one of the most widely used wide gap materials in the microelectronic industry. Stemming from the need to miniaturize electronic devices, high κ materials such as hafnia-based compounds replace SiO2 in gate oxides, thereby decreasing the equivalent oxide thickness of the gate dielectric. On the other hand, scaling down deteriorates the physical properties of the latter viz., leakage c...

We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350 °C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterizat...

Thin films of HfO2 produced by pulsed-laser deposition on sapphire, yttria-stabilized zirconia, or silicon substrates show ferromagnetic magnetization curves with little hysteresis and extrapolated Curie temperatures far in excess of 400 K. The moment does not scale with film thickness, but in terms of substrate area it is typically in the range 150–400 B nm −2. The magnetization exhibits a rem...

This paper presents the impact of parameter optimization of n-type MOSFET for direct tunneling gate current using ultrathin Si3N4 and HfO2 with EOT (Equivalent Oxide Thickness) of 1.0 nm. This work is compared with TCAD santaurus simulation results to verify that accuracy of the model and excellent reduction in gate leakage with the introduction of the high-k gate dielectrics (HfO2 & Si3N4) in ...

The phase transformation of ferroelectric (FE) HfO2 induced by electric field cycling was observed at a macroscopic scale using the conventional X-ray diffraction (XRD) technique. We confirmed that increase in switchable polarization (Psw) is result to amount higher symmetric HfO2, both scale. During characterization, we found an anomalous shift difference between in-plane and out-of-plane inte...

We report Hf1-xTixO2 (0< = x< = 1) thin films (HTO) as index tunable and highly transparent materials for ultraviolet to near infrared integrated photonic devices. By varying the Ti concentration, reactive cosputtered HTO thin films on thermal oxidized SiO2 on Si substrates show continuously tunable optical band gaps from 3.9 eV to larger than 5 eV. The film refractive index monotonically incre...