The superior properties of silicon carbide (SiC) power electronic devices compared with silicon (Si) are expected to have a significant impact on next-generation vehicles, especially hybrid electric vehicles (HEVs). The system-level benefits of using SiC devices in HEVs include a large reduction in the size, weight, and cost of the power conditioning and/or thermal systems. However, the expecte...

The electrical compensation effect of the nitrogen incorporation at the SiO2/4H-SiC (p-type) interface after thermal treatments in ambient N2O is investigated employing both scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). SSRM measurements on p-type 4H-SiC areas selectively exposed to N2O at 1150 °C showed an increased resistance compared to the unexpo...

In this research the influence of adding SiC on microstructure and electrical properties of ZnO-based Nanocomposite varistors were investigated. SiC was added with amounts of 10-0 mass% to ZnO-based varistor composition. It is found that SiC allows reaching to high threshold voltage with formation of fine-graine...

This paper describes the results of an exploratory study of blanket concepts based on SiC/SiC structure and LiPb breeder. An assessment of the performance of these concepts for advanced power plant application i s presented, key issues are identified, and constraints relating to the SiC/SiC properties are discussed.

Single-shot nanosecond risetime pulse testing of SiC devices is demonstrated to reveal unique and highly crucial device performance information not obtainable by conventional DC and RF electrical testing. This paper describes some strikingly important device behaviors observed during pulse-testing experiments of 4H-SiC pn junction diodes. Specific observations include: 1) a remarkably fast and ...

Introduction: Submicron-to micron-sized grains of SiC originating from asymptotic giant branch (AGB) stars and supernovae (SN) can be ubiquitous in the matrices of primitive chondrites. Previous work has shown that presolar SiC occurs as three fundamental polytypes or stacking sequences (cubic 3C, hexagonal 2H, and one-dimensionally disordered hexagonal structure designated here ∞H) along with ...

Silicon carbide (SiC) is considered as an important material for nuclear engineering due to its excellent properties. Changing the carbon content in SiC can regulate and control its elastic and thermodynamic properties, but a simulation study of the effect of carbon content on the sputtering (caused by the helium ions) of SiC is still lacking. In this work, we used the Monte-Carlo and molecular...

The diffusion of water in amorphous SiC a-SiC was investigated by molecular modeling methods based on density functional theory. It was assumed that the structure of a-SiC at the molecular level can be described by a model that takes into account a distribution of cage structures which consist of SiC units forming n-member rings from a suitable precursor in a chemical vapor deposition process. ...

In this paper successive interference cancellation (SIC) based on optical code division multiple access (O-CDMA) systems has been investigated. SIC scheme refers to a family of low complexity multi-user detection (MUD) methods for direct sequence CDMA systems. Performance of optical CDMA system is influenced by multiple access interference (MAI) resulted from the overlapping between the users. ...

SIC (Successive Interference Cancellation) is an effective way of multiple packet reception (MPR) to fight with interference in wireless networks. Most of the existing methods for SIC in wireless networks are mainly focusing on link scheduling. For characterizing the impact of SIC, two interference models such as layered protocol model and layered physical model are introduced. Various existing...