نتایج جستجو برای: حافظه ی nand flash

تعداد نتایج: 124665  

Journal: :IEICE Transactions 2008
Han-A-Reum Jung Kyoung-Rok Han Young-Min Kim Jong-Ho Lee

A new SONOS flash memory device with recess channel and side-gate was proposed and designed in terms of recess depth, doping profile, and side-gate length for sub-40 nm flash memory technology. The key features of the devices were characterized through 3-dimensional device simulation. This cell structure can store 2 or more bits of data in a cell when it is applied to NOR flash memory. It was s...

2007
Hyun-Seob Lee Sangwon Park Ha-Joo Song Dong-Ho Lee

Recently, NAND flash memory has been used for a storage device in various mobile computing devices such as MP3 players, mobile phones and laptops because of its shock-resistant, low-power consumption, and nonevolatile properties, However, due to the very distinct characteristics of flash memory, disk based systems and applications may result in severe performance degradation when directly adopt...

Journal: :IEEE Transactions on Semiconductor Manufacturing 2013

Journal: :IEEE Access 2021

NAND flash memory – ubiquitous in today’s world of smart phones, SSDs (solid state drives), and cloud storage has a number well-known reliability problems. data contains bit errors, which require the use error correcting codes (ECCs). The raw rate (RBER) increases with program-erase (P-E) cycling, P-E cycles device can withstand before RBER exceeds ECC capability is called its endurance. operat...

2006

Features • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) – Page size x16: 1,056 words (1,024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks • READ performance – Random READ: 25μs – Sequential READ: 30ns (3V x8 only) • WRITE performance – PROGRAM PAGE: 300μs (TYP) – BLOCK ERASE: 2ms (TYP) • Endurance: 100,...

2012
Kshitij Sudan Anirudh Badam David Nellans

NAND-flash storage is a preferred method to accelerate I/O intensive applications because of its high throughput and fast random-read performance. However, the high cost per GB of flash, relative to magnetic disks, prevents large datacenters from moving their data entirely onto the flash media. Normally, limited amounts of flash is used “in front of” magnetic storage to speed up accesses to the...

2007

Features • Single-level cell (SLC) technology • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) – Block size: 64 pages (128K + 4K bytes) – Plane size: 2,048 blocks – Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks; 16Gb: 16,384 blocks • READ performance – Random READ: 25μs (MAX) – Sequential READ: 25ns (MIN) • WRITE performance – PROGRAM PAGE: 220μs (TYP) – BLOCK ERASE: 1.5ms (TYP...

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