نتایج جستجو برای: تیوری doi

تعداد نتایج: 89614  

Journal: :ABCS Health Sciences 2017

Journal: :Thermal Science 2014

2015
Fabián Rueda María Virtudes Céspedes Oscar Conchillo Rafael Cubarsi Alberto Gallardo Neus Ferrer-Miralles Xavier Daura Esther Vázquez Ramón Mangues Ugutz Unzueta Antonio Villaverde A. Villaverde

2011
Abhinav M. Gaikwad Gregory L. Whiting Daniel A. Steingart Ana Claudia Arias G. L. Whiting A. M. Gaikwad A. C. Arias

1 DOI: 10.1002/adma.201100894 Highly flexible printed alkaline batteries based on mesh embedded electrodes By Abhinav M. Gaikwad, Gregory L. Whiting*, Daniel A. Steingart* and Ana Claudia Arias [*] Dr. G. L. Whiting, A. M. Gaikwad, Prof. A. C. Arias Electronic, Materials and Devices Laboratory Palo Alto Research Center (PARC) 3333 Coyote Hill Road, 94304 (USA) Email:[email protected] [*]...

2015
Jiri Orava Daniel W. Hewak Lindsay Greer A. L. Greer

Dr. J. Orava, Prof. A. L. Greer Department of Materials Science & Metallurgy, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom E-mail: [email protected] Dr. J. Orava, Prof. A. L. Greer WPI Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan Prof. D. W. Hewak Optoelectronics Research Centre, University of Southampton, Southampton ...

2006
YANG Yan HAO Yue ZHANG Jincheng WANG Chong FENG Qian

The effects of strain relaxation of AlGaN barrier layer on the conduction band profile, electron concentration and two-dimensional gas (2DEG) sheet charge density in a high Al-content AlGaN/GaN high electron mobility transistor (HEMT) are calculated by self-consistently solving Poisson’s and Schrödinger’s equations. The effect of strain relaxation on dc I-V characteristics of AlxGa1−xN/GaN HEMT...

2015
Claudio Ferraro Esther Garcia-Tuñon Victoria G. Rocha Suelen Barg Maria Dolores Fariñas Tomas E Gomez Alvarez-Arenas Giorgio Sernicola Finn Giuliani Eduardo Saiz C. Ferraro V. G. Rocha G. Sernicola E. Saiz T. E. Gomez Alvarez-Arenas

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