MoS2 is a two-dimensional material that is gaining prominence due to its unique electronic and chemical properties. Here, we demonstrate ligand conjugation of chemically exfoliated MoS2 using thiol chemistry. With this method, we modulate the ζ-potential and colloidal stability of MoS2 sheets through ligand designs, thus enabling its usage as a selective artificial protein receptor for β-galact...

Highly active and stable MoS2/carbon hierarchical spheres with abundant active edge sites were fabricated by a simple micro-emulsion procedure where PVP was used as the carbon source, and carbon disulfide as the sulfur source and oil phase in micro-emulsion to control the morphology of MoS2. Hierarchical spheres of MoS2/carbon with a diameter of ca. 500 nm were obtained and characterized by sca...

Recently, transition metal dichalcogenides (TMDs), represented by MoS2, have been proven to be a fascinating new class of electrocatalysts in hydrogen evolution reaction (HER). The rich chemical activities, combined with several strategies to regulate its morphologies and electronic properties, make MoS2 very attractive for understanding the fundamentals of electrocatalysis. In this review, rec...

First-principles calculations are performed to investigate the structural stability of Na adsorption on 1H and 1T phases of monolayer MoS2. Our results demonstrate that it is likely to make the stability of distorted 1T phase of MoS2 over the 1H phase through adsorption of Na atoms. The type of distortion depends on the concentration of adsorbed Na atoms and changes from zigzag-like to diamond-...

Friction was measured on a single molybdenum disulfide (MoS2) nanotube and on a single MoS2 nano-onion for the first time. We used atomic force microscopy (AFM) operating in ultra-high vacuum at room temperature. The average coefficient of friction between the AFM tip and MoS2 nanotubes was found considerably below the corresponding values obtained from an air-cleaved MoS2 single crystal or gra...

We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors (TFTs) with thin (2–3 atomic layers) and thick (15–18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2 channels have advantages of the higher electron mobility and lower noise level. The normalized noise spectral density of the low-frequency 1/ f noise in thick Mo...

We report the largest-size thin films of uniform single-layer MoS2 on sapphire substrates grown by chemical vapor deposition based on the reaction of gaseous MoO3 and S evaporated from solid sources. The as-grown thin films of single-layer MoS2 were continuous and uniform in thickness for more than 4 cm without the existence of triangular-shaped MoS2 clusters. Compared to mechanically exfoliate...

Based on the first principles calculation, we investigate the electronic band structures of graphene-MoS2 and Ti-MoS2 heterojunctions under gate-voltages. By simultaneous control of external electric fields and carrier charging concentrations, we show that the graphene's Dirac point position inside the MoS2 bandgap is easily modulated with respect to the co-varying Fermi level, while keeping th...

As a noncentrosymmetric crystal with spin-polarized band structure, MoS2 nanomaterials have attracts increasing attention in many areas such as lithium ion batteries, flexible electronic devices, photoluminescence and valleytronics. The investigation of MoS2 is mainly focused on the electronics and spintronics instead of optics, which restrict its applications as key elements of photonics. In t...

We show that the lattice contribution to the thermal conductivity of MoS2 strongly dominates the carrier contribution in a broad temperature range from 300 to 800K. Since theoretical insight into the lattice contribution is largely missing, though it would be essential for materials design, we solve the Boltzmann transport equation for the phonons self-consistently in order to evaluate the phon...