A compact set of equations based on the multiple subbands quasi-ballistic transport theory is developed, and is used to investigate the channel electron effective mobility in recently reported In0 .53Ga0 .47As/Al2O3 tri-gate n-FinFET. The extracted electron effective mobility μn is around 370 cm2 /V·s at low Vg−Vth bias at room temperature and decreases with increasing Vg , and increases with i...

This paper provides the estimation of power dissipation of CMOS and finFET based 6T SRAM Memory. CMOS expertise feature size and threshold voltage have been scaling down for decades for achieving high density and high performance. The continuing reduce in the feature size and the corresponding increases in chip density and operating frequency have made power consumption a major concern in VLSI ...

This work investigates the S-curve engineering by exploiting anti-ferroelectric (AFE)/ferroelectric (FE) stack negative-capacitance FinFET (NC-FinFET) to improve both subthreshold swing and ON-state current ( I ON ). The capacitance matching performance are evaluated using a short-channel AFE/FE...

To extend the use of CMOS technology beyond 14 nm node technology, new device materials are required that can enhance the performance of MOSFETs. The use of high-k materials in double gate (DG) MOSFET can triumph over the problem of power dissipation and leakage current. In this paper, we investigated various high-k dielectrics as the gate oxides in a 12 nm SOI FinFET and the performance potent...

Based on the multiple subbands quasi-ballistic transport theory, we investigate the electronic transport of nano size In0.53Ga0.47As nFinFETs with Al2O3 gate dielectric, emphasizing the saturation current region. 1D mobile charge density and gate capacitance density are introduced for the first time to describe the nano-FinFET transport property under volume inversion. With the extracted effect...

ABSTRACT In this paper we propose Double gate transistors (FinFETs) are the substitutes for bulk CMOS evolving from a single gate devices into three dimensional devices with multiple gates (double gate, triple gate or quadruple-gate devices). The main drawback of using CMOS transistors are high power consumption and high leakage current. Enormous progress has been made to scale transistors to e...

The effect of optical radiation on a uniformly doped nanoscale FinFET considering quantum mechanical effects has been theoretically examined and analyzed. The device characteristics are obtained from the self-consistent solution of 3D Poisson-Schrödinger equation using interpolating wavelet method. To our best knowledge this is the first approach for the self-consistent solution to surface pote...

Stationary random-access memory (SRAM) undergoes an expansion stage, to repel advanced process variation and support ultra-low power operation. Memories occupy more than 80% of the surface in today’s microdevices, this trend is expected continue. Metal oxide semiconductor field effect transistor (MOSFET) face a set difficulties, that results higher leakage current (Ileakage) at lower strategy c...