ghaziasadi, hassan

[ 1 ] - Rectification in Graphene Self-Switching Nanodiode Using Side Gates Doping

The electrical properties and rectification behavior of the graphene self-switching diodes by side gates doping with nitrogen and boron atoms were investigated using density functional tight-binding method. The devices gates doping changes the electrical conductivity of the side gates and the semiconductor channel nanoribbons. As a result, the threshold voltage value under the forward bias is s...