Ghasabi Mobarak Abadi, Soheila

[ 1 ] - Design of a Low Power Magnetic Memory in the Presence of Process Variations

With the advancement in technology and shrinkage of transistor sizes, especially in technologies below 90 nm, one of the biggest problems of the conventional CMOS circuits is the high static power consumption due to increased leakage current. Spintronic devices, like magnetic tunnel junction (MTJ), thanks to their low power consumption, non-volatility, compatibility with CMOS transistors, and t...