Amirreza Bozorgi Golafzani
Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran.
[ 1 ] - Representation of a nanoscale heterostructure dual material gate JL-FET with NDR characteristics
In this paper, we propose a new heterostructure dual material gate junctionless field-effect transistor (H-DMG-JLFET), with negative differential resistance (NDR) characteristic. The drain and channel material are silicon and source material is germanium. The gate electrode near the source is larger. A dual gate material technique is used to achieve upward band bending in order to access n-i-p-...
نویسندگان همکار