A. Mirhabibi

[ 1 ] - Modelling Temperature Dependency of Silicon Nitride Formation Kinetic during Reaction Bonded Method

An accurate prediction of reaction kinetics of silicon nitridation is of great importance in designing procedure of material production and controlling of reaction. The main purpose of the present study is to investigate the effect of temperature on the kinetics of reaction bonded silicon nitride (RBSN) formation. To achieve this, nitrogen diffusion in the silicon nitride layer is considered as...