Sepehri, Zahra
Department of Electrical and Computer Engineering, Isfahan University of Technology,Isfahan, Iran.
[ 1 ] - Analytical Threshold Voltage Computations for 22 nm Silicon-on-Diamond MOSFET Incorporating a Second Oxide Layer
In this paper, for the first time, an analytical equation for threshold voltage computations in silicon-on-diamond MOSFET with an additional insulation layer is presented; In this structure, the first insulating layer is diamond which covered the silicon substrate and second insulating layer is SiO2 which is on the diamond and it is limited to the source and drain on both sides. Analytical solu...
نویسندگان همکار