Maryam Nobakht

[ 1 ] - A Sub-threshold 9T SRAM Cell with High Write and Read ability with Bit Interleaving Capability

This paper proposes a new sub-threshold low power 9T static random-access memory (SRAM) cell compatible with bit interleaving structure in which the effective sizing adjustment of access transistors in write mode is provided  by isolating writing and reading paths. In the proposed cell, we consider a weak inverter to make better write mode operation. Moreover applying boosted word line feature ...