H. Hoseinkhani

Department of physics, Faculty of science, I.H.U Tehran, Iran.

[ 1 ] - The effect of first order magnetic field in a GaAs/AlAs spherical quantum dot with hydrogenic impurity

In this research, the effect of the first order magnetic field on the ground-state of a centered hydrogenic donor impurity in a GaAs/AlAs spherical quantum dot has been calculated. The perturbation method has been used within the framework of effective mass approximation for these calculations. Overall, the analysis shows that a proper choice of quantum dot radius and magnetic field can signifi...

[ 2 ] - Time-dependent analysis of carrier density and potential energy in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD)

Interaction and correlation effects in quantum dots play a fundamental role in defining both their equilibrium and transport properties. Numerical methods are commonly employed to study such systems. In this paper we investigate the numerical calculation of quantum transport of electrons in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD). The simulation is based on the imaginary time...

[ 3 ] - The effect of first order magnetic field in a GaAs/AlAs spherical quantum dot with hydrogenic impurity

In this research, the effect of the first order magnetic field on the ground-state of a centered hydrogenic donor impurity in a GaAs/AlAs spherical quantum dot has been calculated. The perturbation method has been used within the framework of effective mass approximation for these calculations. Overall, the analysis shows that a proper choice of quantum dot radius and magnetic field can signifi...

[ 4 ] - Time-dependent analysis of carrier density and potential energy in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD)

Interaction and correlation effects in quantum dots play a fundamental role in defining both their equilibrium and transport properties. Numerical methods are commonly employed to study such systems. In this paper we investigate the numerical calculation of quantum transport of electrons in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD). The simulation is based on the imaginary time...

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