M. R. Hantehzadeh

Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran, Iran.

[ 1 ] - Conductance of T-shaped Graphene nanodevice with single disorder

Disordered T-shaped graphene nanodevice (TGN) was designed and studied in this paper. We demonstrated the intrinsic transport properties of the TGN by using Landauer approach. Knowing the transmission probability of an electron the current through the system is obtained using Landauer-Buttiker formalism. The effects of single disorder on conductance, current and on the transport length scales a...

[ 2 ] - Conductance of T-shaped Graphene nanodevice with single disorder

Disordered T-shaped graphene nanodevice (TGN) was designed and studied in this paper. We demonstrated the intrinsic transport properties of the TGN by using Landauer approach. Knowing the transmission probability of an electron the current through the system is obtained using Landauer-Buttiker formalism. The effects of single disorder on conductance, current and on the transport length scales a...

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