Gopinath Palai

[ 1 ] - Theoretical Investigation of Doping Concentration in Silicon Semiconductor Using Optical Principle

This paper investigates the amount of doping concentration in silicon semiconductor using optical principle.  Both donor and acceptor impurities of n type and p-type silicon semiconductor materials are computed at wavelength of 1550 nm. During the computation of donor and acceptor impurities, both reflection and absorption losses are considered. Theoretical result showed that transmitted intens...