فتح اللهی, وحید
سازمان انرژی اتمی
[ 1 ] - اندازه‌گیری هیدروژن در عمق نمونۀ سیلیکان متخلخل به روش آشکارسازی ذرات پس‌زده از برخورد کشسان
Porous silicon (PS) samples are obtained by electrochemical anodization of Si wafers in HF+DMF solution. The hydrogen complex components are formed on the inner surface walls of porous silicon. In this work the depth profile of porous silicon is estimated by measurement of hydrogen content in the depth of the sample. Since the well-known ion beam analysis simulation programs are inappropriate f...
[ 2 ] - مقایسۀ دو روش برهم‌کنش هسته‌ای و پراکندگی تشدیدی برای اندازه‌گیری نمایۀ عمقی اکسیژن در آلومینای نانو متخلخل
Depth profiling of Oxygen in the surface of materials is important for many oxide elements. In this research two methods of ion beam analysis techniques were used for depth profiling of oxygen in nanoporous anodic Alumina by Nuclear Reaction Analysis (NRA) ( 16O(d, p1)17O ,16O(d, p0)17O) and resonant elastic scattering (RES)( 16O(α, α)16O). By using simulation software, variation of oxygen conc...
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