Morteza Gholipour
Department of Electrical & Computer Engineering, Babol Noshirvani University of Technology, Babol, Iran.
[ 1 ] - Effects of the Channel Length on the Nanoscale Field Effect Diode Performance
Field Effect Diode (FED)s are interesting device in providing the higherON-state current and lower OFF–state current in comparison with SOI-MOSFETstructures with similar dimensions. The impact of channel length and band-to-bandtunneling (BTBT) on the OFF-state current of the side contacted FED (S-FED) has beeninvestigated in this paper. To find the lowest effective channel length, this device i...
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