Zahra Zeinadini

[ 1 ] - Design and Fabrication of a 9–11 GHz Balanced Low Noise Amplifier Using HJFET

This paper describes the design of an X-band balanced low noise amplifier (LNA) using an available HJFET device. The balanced LNA consists of a pair of electrically similar transistors whose input and output signals are divided or combined by 3 dB two-stage Wilkinson power dividers. The proposed balanced LNA is fabricated and measured. The measured results show that the noise figure is 1.30 dB ...