N. Prithivikumaran

[ 1 ] - Sol – Gel Spin Coated Cadmium Sulphide ‎Thin Films on Silicon (1 0 0) Substrates for ‎Optoelectronic Applications

Cadmium chalcogenides with appropriate band gap energy have been attracting a great deal of attention because of their potential applications in optoelectronic devices. In this work CdS thin films were deposited on p – type silicon substrates by sol – gel spin coating method at different substrate temperatures. The CdS deposited wafers were characterized by X‐ray diffracti...

[ 2 ] - Control capability of electrolytic concentration on refractive index and dielectric constant of porous Silicon layers

Porous Silicon (PS) samples have been prepared by electrochemical anodization of p-type silicon wafer by varying HF concentrations in the electrolytic solution. The structural, surface morphological, optical and surface composition analysis of the prepared samples were done by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Photoluminescence (PL) and Fourier transform infr...

[ 3 ] - Synthesis and characterization of Cadmium Oxide nanoparticles for antimicrobial activity

Cadmium Oxide (CdO) nanoparticles were prepared by precipitation method using Cadmium acetate and ammonia solution. Presence of chemical species, were verified by Fourier Transform Infra Red (FTIR) Spectrum. From X-Ray Diffraction (XRD) spectrum the particle size, d-spacing value and structure of the nanoparticle were analysed. Size of the nanoparticles and the elemental composition were detect...

[ 4 ] - Effect of annealing and UV illumination on properties of nanocrystalline ZnO thin films

ZnO thin films with preferred orientation along the (002) plane were prepared onto the glass substrates by the sol-gel spin coating method for different post- annealing temperatures. The XRD study confirms that the thin films grown by this method have good crystalline hexagonal wurtzite structure. The optical band gap of the samples was determined from UV-visible spectra. It is found that the s...

[ 5 ] - Influence of current density on refractive index of p-type nanocrystalline porous silicon

Porous Silicon (PS) layers have been prepared from p-type silicon wafers of (100) orientation. SEM, XRD, FTIR and PL studies were done to characterize the surface morphological and optical properties of PS. The porosity of the PS samples was determined using the parameters obtained from SEM images by geometric method. The refractive index values of the PS samples as a function of poros...

[ 6 ] - Control capability of electrolytic concentration on refractive index and dielectric constant of porous Silicon layers

Porous Silicon (PS) samples have been prepared by electrochemical anodization of p-type silicon wafer by varying HF concentrations in the electrolytic solution. The structural, surface morphological, optical and surface composition analysis of the prepared samples were done by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Photoluminescence (PL) and Fourier transform infr...

[ 7 ] - Synthesis and characterization of Cadmium Oxide nanoparticles for antimicrobial activity

Cadmium Oxide (CdO) nanoparticles were prepared by precipitation method using Cadmium acetate and ammonia solution. Presence of chemical species, were verified by Fourier Transform Infra Red (FTIR) Spectrum. From X-Ray Diffraction (XRD) spectrum the particle size, d-spacing value and structure of the nanoparticle were analysed. Size of the nanoparticles and the elemental composition were detect...

[ 8 ] - Effect of annealing and UV illumination on properties of nanocrystalline ZnO thin films

ZnO thin films with preferred orientation along the (002) plane were prepared onto the glass substrates by the sol-gel spin coating method for different post- annealing temperatures. The XRD study confirms that the thin films grown by this method have good crystalline hexagonal wurtzite structure. The optical band gap of the samples was determined from UV-visible spectra. It is found that the s...

[ 9 ] - Influence of current density on refractive index of p-type nanocrystalline porous silicon

Porous Silicon (PS) layers have been prepared from p-type silicon wafers of (100) orientation. SEM, XRD, FTIR and PL studies were done to characterize the surface morphological and optical properties of PS. The porosity of the PS samples was determined using the parameters obtained from SEM images by geometric method. The refractive index values of the PS samples as a function of poros...