محمدعظیم کرمی
دانشگاه علم و صنعت ایران - دانشکده مهندسی برق
[ 1 ] - نوسان‌ساز حلقوی جدید کنترل‌شده با ولتاژ با استفاده از اثر میلر
در این مقاله، یک نوسان‌ساز حلقوی جدید کنترل‌شده با ولتاژ ارائه شده است. تغییر خازن سلول تأخیر پایه نوسان‌ساز، با به‌کارگیری اثر میلر انجام شده است. نتایج شبیه‌سازی نشان می‌دهد به‌کارگیری این اثر، سبب افزایش خطینگی و کاهش نویز فاز می‌شود. این نوسان‌ساز در فن‌آوری 0.18 میکرون سی‌ماس طراحی و طرح‌بندی آن شبیه‌سازی شده است. این نوسان‌ساز برای کاربرد در دو حالت دست‌یابی به کمترین نویز و دیگر برای دست...
[ 2 ] - Neural Monitoring With CMOS Image Sensors
Implantable image sensors have several biomedical applications due to their miniature size, light weight, and low power consumption achieved through sub-micron standard CMOS (Complementary Metal Oxide Semiconductor) technologies. The main applications are in specific cell labeling, neural activity detection, and biomedical imaging. In this paper the recent research studies on implantable CMOS i...
[ 3 ] - Neural Imaging Using Single-Photon Avalanche Diodes
Introduction: This paper analyses the ability of single-photon avalanche diodes (SPADs) for neural imaging. The current trend in the production of SPADs moves toward the minimumdark count rate (DCR) and maximum photon detection probability (PDP). Moreover, the jitter response which is the main measurement characteristic for the timing uncertainty is progressing. Methods: The neural imaging pro...
[ 4 ] - Plasmonic Adder/Subtractor Module Based on a Ring Resonator Filter
A four port network adder-subtractor module, for surface plasmon polariton (SPP) waves based on a ring resonator filter is proposed. The functionality of module is achieved by the phase difference manipulation of guided SPPs through different arms connected to the ring resonator. The module is designed using the concepts of a basic two-port device proposed in this paper. It is shown that two po...
[ 5 ] - Electrical μ-Lens Synthesis Using Dual-Junction Single-Photon Avalanche Diode
This work presents a dual-junction, single-photon avalanche diode (SPAD) with electrical μ-lens designed and simulated in 90 nm standard complementary metal oxide semiconductor (CMOS) technology. The evaluated structure can collect the photons impinging beneath the pixel guard ring, as well as the pixel active area. The fill factor of the SPAD increases from 12.5% to 42% in comparison with simi...
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