hoseini, zahra

[ 1 ] - Investigation and simulation of the effect of Substrate Doping on the Switching Delay of 22nm Double-Insulating UTBB SOI MOSFET

In this paper, for the first time, the effect of the substrate doping of 22nm double-insulating UTBB silicon-on-insulator device on the switching performance and turn-on delay of the transistor is investigated. In UTBB devices, the substrate voltage is varied from positive to zero then negative voltages to trade-off transistor speed against the leakage current. Various circuit design procedures...