Amir Hoshang Ramezani
Department of Physics, West Tehran Branch, Islamic Azad University, Tehran, Iran
[ 1 ] - Tantalum/ Nitrogen and n-type WO3 semiconductor/FTO structures as a cathode for the future of nano devices
In the last decades an important number of research papers published on nano chip electrode and cathode electrochromic materials. Tantalum (Ta) with so high melting point can be as a good candidate for the future of nano chip devices. However, its surface has not enough trap centers and/or occupation states, so nitrogen ions exposed on Ta surafce, may solve this problem. For this purpose, in th...
[ 2 ] - Correlation between crystal structure and optical properties of copper- doped ZnO thin films
ZnO and Cu doped[1] (CZO) thin films were prepared by radio frequency sputtering. The structural and optical properties of thin films were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), optical spectrophotometer, and photoluminescence (PL) techniques. ZnO thin films showed crystalline and micro-stress defects in the crystal lattice. Annealing of CZO thin films increa...
[ 3 ] - The Effects Of Interfacial Roughness On The Argon Ion Implanted Tantalum Films
In the present study, effect of interfacial roughness on the ion implanted Tantalum based surfaces has been investigated. The argon ions with energy of 30 keV and in doses of 1×1017 , 3×1017 , 5×1017 , 7×1017 , and 10×1017 (ion/cm2) have been used at ambient temperature. The Atomic Force Microscopy (AFM), analysis have been used to study and characterize the surfaces morphology. The effect of ...
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