Fariba Tajabadi
Nanomaterials and Advanced Materials, Institute of materials and energy
[ 1 ] - Implementation of EIS for dopant profile analysis in n-type silicon
An experimental setup has been developed for successive photo-electrochemical etch and EIS measurement of semiconductor samples. Furthermore an algorithm based on electrochemical capacitance-voltage (ECV) has been developed for calculating dopant profile based on the measurements by developed setup. Phosphorous diffusion profile in p-type silicon was estimated by employing developed setup and a...
[ 2 ] - Fabrication of Graphene Oxide Thin Films on Transparent Substrate via a Low-Voltage Electrodeposion Technique
Graphene oxide (GO) thin films were simply deposited on fluorine doped tin oxide (FTO) substrate via a low-voltage electrodeposition. The GO and GO thin films were characterized by Zeta Potential, X-ray diffraction, Ultraviolet-Visible spectroscopy, atomic force microscopy, Fourier transform infrared spectroscopy, field emission scanning electron microscopy and energy dispersive X-ray spectrosc...
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