Ahmad Saraei
Semiconductors, Institute of materials and energy
[ 1 ] - Implementation of EIS for dopant profile analysis in n-type silicon
An experimental setup has been developed for successive photo-electrochemical etch and EIS measurement of semiconductor samples. Furthermore an algorithm based on electrochemical capacitance-voltage (ECV) has been developed for calculating dopant profile based on the measurements by developed setup. Phosphorous diffusion profile in p-type silicon was estimated by employing developed setup and a...
[ 2 ] - Investigation of resistive switching in anodized titanium dioxide thin films
In this work, TiO2 nanostructures were grown on titanium thin films by electrochemical anodizing method. The bipolar resistive switching effect has been observed in Pt/TiO2/Ti device. Resistive switching characteristics indicated the TiO2 nanotubes are one of the potential materials for nonvolatile memory applications. Increasing anodizing duration will increase nanotube lengths which itself c...
Co-Authors