Behrooz Abdi Tahne
Young Researchers and Elite Club, Kermanshah Branch, Islamic Azad University, Kermanshah, Iran.
[ 1 ] - Band bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate
The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...
[ 2 ] - Band bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate
The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...
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