Moravvej-Farshi, M. K.
Tarbiat Modares University
[ 1 ] - Time Domain Analysis of Graphene Nanoribbon Interconnects Based on Transmission Line Model
Time domain analysis of multilayer graphene nanoribbon (MLGNR) interconnects, based on transmission line modeling (TLM) using a six-order linear parametric expression, has been presented for the first time. We have studied the effects of interconnect geometry along with its contact resistance on its step response and Nyquist stability. It is shown that by increasing interconnects dimensions...
[ 2 ] - Band Structures for 2D Photonic Crystals in Presence of Nonlinear Kerr Effect Calculated by Use of Nonlinear Finite Difference Time Domain (NFDTD) Method
We report the simulation results for impact of nonlinear Kerr effect on band structures of a two dimensional photonic crystal (2D-PhC) with no defect, a PhC based W1-waveguide (W1W), and also Coupled-Cavity Waveguides (CCWs). All PhC structres are assumed to a square lattice of constant a made of GaAs rods of radius r=0.2a, in an air background. The numerical simulation was performed using...
[ 3 ] - Design Optimization for 4.1-THZ Quantum Cascade Lasers
We present an optimized design for GaAs/AlGaAs quantum cascade lasers operating at 4.1THz. This was based on a three-well active module with diagonal radiative transition. This was performed by modifying the existing model structure, to reduce the parasitic anticrossings (leakage currents) as well as the optical gain linewidth. While the gain FWHM was reduced by more than 50% the gain pea...
[ 4 ] - Designing a dual-core photonic crystal fiber coupler by means of microfluidic infiltration
We report the results of our study on the role of microfluidic infiltration technique in improving the coupling characteristics of dual-core photonic crystal fiber (PCF) couplers. Using the finite element method (FEM), we evaluate the effective mode area, dispersion and coupling parameters of an infiltrated dual-core PCF. We use these parameters to design a compact and reconfigurable coupler by...
[ 5 ] - Characteristic of P-type AlAs/GaAs Bragg Mirrors Grown by MBE on (100) and (311)A Oriented Substrates
P-type GaAs/AlAs distributed Bragg mirrors have been grown using molecular beam epitaxy on (100) and (311)A GaAs substrates in a similar conditions. A comparison of I-V measurements shows that the resistance of the ungraded mirrors grown on the (311)A substrate is 35 times lower than those grown on the (100) substrate with similar structure. The effective barrier heights for both (311 )A and (1...
[ 6 ] - Effects of D-Doping on Characteristics of AlAs/GaAs Barriers Grown by Mba at 400 ??C
Effects of d-doping on barriers effective heights and series resistance of highly doped n-type GaAs/AIAs/GaAs/AlAs/GaAs heterostructures, grown by molecular beam epitaxy (MBE) at 400?°C, have been studied. As it was expected, inclusion of an n+ d-doped layer at each hetero-interface has reduced the barriers heights and series resistance of the structure significantly, while p+ d-doped layers ha...
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