کلاهدوز, محمدرضا
دانشکده مهندسی برق و کامپیوتر- دانشگاه تهران - تهران- ایران
[ 1 ] - تحلیل و بهبود جریان حالت خاموش نانو ماسفت کرنشی دومحوره سیلیکانی نوع p با کنترل چگالی ناخالصی زیرلایه مجازی
In biaxially strained p-MOSFET with Si channel, formation of a parasitic parallel channel due to misalignment of energy bands degrades device performance by increasing off-state current. In this paper a new approach has been introduced to eliminate this parasitic channel by increasing the dopant concentration of virtual substrate up to . Using simulation the impact of this method on the parasit...
[ 2 ] - Solar cell efficiency enhancement using a hemisphere texture containing metal nanostructures
One major problem of the conventional solar cells is low conversion efficiency. In this work, we have proposed a new design including hemisphere texturing on top and metallic plasmonic nanostructure under the silicon layer to enhance the optical absorption inside the photosensitive layer. The finite-difference time-domain (FDTD) method has been used to investigate the interaction of light wi...
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