قدرتی, مریم

[ 1 ] - ساختار جدید ترانزیستور اثر میدانی نانولوله کربنی با ناخالصی‌های سبک در کانال و دی‌الکتریک دو قسمتی

Carbon nanotube field effect transistors (CNTFETs), are considered as a proper candidate to improve the silicon transistor performance at short channel regime. In this paper a novel CNTFET with lightly doped channel and dual section dielectric (LIC-DSD-CNTFET) is proposed. This structure is compared with conventional (C-CNTFET) and dual section dielectric (DSD) structures with similar dimension...