درویش, غفار
دانشکده فنی-دانشگاه آزاد علوم تحقیقات-تهران
[ 1 ] - بررسی و مقایسه مشخصات الکترونیکی ترانزیستورهای نانو سیم بدون پیوند نوعP با مواد کانالSi ,InP, InGaP
In this paper, using non-equilibrium Green's function method, the performance of junctionless transistors that are with Si, InP, and InGaP channels material are investigated.The shape of transistor’s gate is chosen as gate all around (GAA). Parameters such as DIBL, subthreshold slope (SS), OFF-state current, ON-state current and ON/OFF current ratio in these devices are investigated. The ...
[ 2 ] - A Highly LinearLNA with Noise Cancellation for 5.8–10.6 GHz UWB Receivers
This paper presents a new ultra-wideband LNA which employs the complementary derivative superposition method in noise cancellation structure. A pMOS transistor in weak inversion region is employed for simultaneous second- and third-order distortion cancellation. Source-degeneration technique and two shunt inductors are added to improve the performance at high frequencies. The degeneration induc...
[ 3 ] - Ultra-Compact Bidirectional Terahertz Switch Based on Resonance in Graphene Ring and Plate
In this paper, we present a switch based on coupling and resonance in thegraphene plate and rings operating at 10 THz. This structure consists of several layers ofHexagonal Boron Nitride (hBN), SiO2 and P+Si, such that graphene plates and rings areinside the hBN layer. The terahertz wave is incident from the upper part of the switchand Surface Plasmons (SPs) are excited ...
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