Rahim Faez
Department of Electrical Engineering, Sharif University of Technology, Tehran, Iran
[ 1 ] - A Computational Study on the Performance of Graphene Nanoribbon Field Effect Transistor
Despite the simplicity of the hexagonal graphene structure formed by carbon atoms, the electronic behavior shows fascinating properties, giving high expectation for the possible applications of graphene in the field. The Graphene Nano-Ribbon Field Effect Transistor (GNRFET) is an emerging technology that received much attention in recent years. In this paper, we investigate the device performan...
[ 2 ] - بررسی و مقایسه مشخصات الکترونیکی ترانزیستورهای نانو سیم بدون پیوند نوعP با مواد کانالSi ,InP, InGaP
In this paper, using non-equilibrium Green's function method, the performance of junctionless transistors that are with Si, InP, and InGaP channels material are investigated.The shape of transistor’s gate is chosen as gate all around (GAA). Parameters such as DIBL, subthreshold slope (SS), OFF-state current, ON-state current and ON/OFF current ratio in these devices are investigated. The ...
[ 3 ] - طراحی و شبیه‌سازی سلول خورشیدی سه‌پیوندی بر مبنای چاه کوانتومی
In this paper, the purpose is to improve the efficiency of triple-junction solar cell by introducing quantum well into GaAs junction. Firstly, InGaP/GaAs/InGaAs triple-junctions solar cell has been simulated. Then, a multiple stepped quantum wells (MSQWs), in which InGaAs well is sandwiched by InGaAsP as stepped layer, and the barrier is GaAs, has been introduced into intrinsic region of single...
[ 4 ] - Time Domain Analysis of Graphene Nanoribbon Interconnects Based on Transmission Line Model
Time domain analysis of multilayer graphene nanoribbon (MLGNR) interconnects, based on transmission line modeling (TLM) using a six-order linear parametric expression, has been presented for the first time. We have studied the effects of interconnect geometry along with its contact resistance on its step response and Nyquist stability. It is shown that by increasing interconnects dimensions...
[ 5 ] - Optical ASK and FSK Modulation By Using Quantum Well Transistor Lasers
In this paper, transistor lasers (TLs) are used as an optical modulator for generation of ASK(Amplitude Shift Keying) and FSK (Frequency Shift Keying) optical signals. Our analysis is based on continuity equation, rate equations, and the theory of discontinuity of quasi-fermi level at the abrupt junction. Our simulation results indicate that, the specification of ASK and FSK optical signals, ar...
[ 6 ] - مدل مداری و ماتریس انتقال خطوط ارتباطی نانولوله‌های کربنی چندلایه ناهمسان باندل شده-
با استفاده از مدل خط انتقال چندگانه، مدل مداری جامعی برای استفاده در خطوط ارتباطی نانولوله‌های کربنی چندلایه ناهمسان باندل شده پیشنهاد می‌شود. با بهره گیری از مدل مداری پیشنهادی، یک مدل الگوریتمی نیز جهت محاسبه ماتریس انتقال این نوع خطوط ارتباطی ارائه می‌گردد. در مدل مداری و به تبع آن مدل الگوریتمی ماتریس انتقال، اثرات سلفی و خازنی و همچنین تونل زنی بین لایه‌های کربنی لحاظ شده است. برای هر چه د...