Mehdi Ahmadi
Department of Physics, Faculty of Science, Vali-e-Asr University of Rafsanjan, Rafsanjan, Iran
[ 1 ] - Preparation and Characterization of ZnO Thin Layers with Various Percentages of Gallium Impurities
In this study, thin films of pure ZnO and doped ZnO with different percentages of gallium (0.5, 1, 2 and 4vt. %) on the glass substrates were deposited by using sol-gel method via spin coating technique at 2500 rpm, and all layers were annealed at 200°C for 1h and then Were examined their electrical, optical and structural properties. Concentration of all solution was 0.1M. The results show th...
[ 2 ] - Al Doped ZnO Thin Films; Preparation and Characterization
ZnO is a promising material suitable for variety of novel electronic applications including sensors, transistors, and solar cells. Intrinsic ZnO film has inferiority in terms of electronic properties, which has prompted researches and investigations on doped ZnO films in order to improve its electronic properties. In this work, aluminum (Al) doped ZnO (AZO) with various concentrations and undop...
Co-Authors