Effects of Temperature on Radiative Properties of Nanoscale Multilayer with Coherent Formulation in Visible Wavelengths

Authors

  • A. Saboonchi Department of Mechanical Engineering, Isfahan University of Technology, Isfahan, Iran
  • S. A. A. Oloomi Department of Mechanical Engineering, Islamic Azad University, Yazd Branch, Yazd, Iran
  • S. Sedaghat Department of Mechanical Engineering, Isfahan University of Technology, Isfahan, Iran
Abstract:

During the past two decades, there have been tremendous developments in near-field imaging and local probing techniques. Examples are the Scanning Tunneling Microscope (STM), Atomic Force Microscope (AFM), Near-field Scanning Optical Microscope (NSOM), Photon Scanning Tunneling Microscope (PSTM), and Scanning Thermal Microscope (SThM).Results showed that the average reflectance for a dopant concentration of  is 0.28247 in 25ºC, 0.30064 in 500ºC and 0.32052 in 1000ºC for donors. The average reflectance for a dopant concentration of  is 0.282474 in 25ºC, 0.30064 in 500ºC and 0.32052 in 1000ºC for acceptors. For visible wavelengths, more reflectance occurs in greater temperature and the emittance decreases as the temperature increases. In these wavelengths, transmittance is negligible. At room temperature for concentration less than , concentration has not important influence on radiative properties. At room temperature, the scattering process is dominated by lattice scattering for lightly doped silicon, and the impurity scattering becomes important for heavily doped silicon when the dopant concentration exceeds . 

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Journal title

volume 11  issue 2

pages  5- 14

publication date 2010-09-01

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