CMOS Technology Characterisation for analog/RF application

We discuss state of the art and new developments for the characterization of CMOS technologies. In the first chapter the most important issues of MOS transistor modeling will be shown. Topics like AC/DC modeling, noise modeling and temperature modeling for the MOS transistor will be explained. State of the art MOS transistor models like the BSIM3 and BSIM4 models as well as the newest surface potential and charge based models will be highlighted. This article touch on a few of the issues that are important for RF design. However the bottom line is the existence of high accurate S-Parameter measurements and frequency dependent SPICE models not only for the active devices like MOS transistor and varactors, also for passive devices like resistors, inductors and capacitors. CMOS technologies include also additional parasitic devices like PNP bipolar transistors, which should be modeled very carefully for different analog applications like band-gap reference circuits. And last but not least the very important topic statistical modeling including worst case corner modeling, Monte Carlo simulation, statistical boundary modeling and mismatch parameter will be discussed.