Introducton to EBIC

In a semiconductor either electrons or holes typically dominate as dictated by the concentration of ionized dopants, and the nomenclature is n type for electrons dominating and p type for holes. Minority carriers are therefore holes in n type and electrons in p type. Electron-hole pair generation is a local disturbance from the equilibrium concentration. As electron hole pairs are formed, the disturbance has the biggest impact for minority carriers, as the generation density is typically less than the majority carrier density.